Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

Journal Article · Mon May 07 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103063· OSTI ID:6970840

Yang, Y J; Dziura, T G; Wang, S C ^[1]; Hsin, W; Wang, S ^[2]

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1. Lockheed Palo Alto Research Laboratory, 3251 Hanover Street, Palo Alto, California 94304 (USA)
2. Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA (USA) Electronics Research Laboratory, University of California, Berkeley, California 94720 (USA)

We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2--0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2--4 {mu}m diameter active region formed by chemical selective etching, and sandwiched between two Al{sub 0.05}Ga{sub 0.95} As/ Al{sub 0.53}Ga{sub 0.47} As distributed Bragg reflectors of very high reflectivity (98--99%) grown by metalorganic chemical vapor deposition.

• OSTI ID: 6970840
• Journal Information: Applied Physics Letters; (USA), Vol. 56:19; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
OPERATION
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
DESIGN
EFFICIENCY
FABRICATION
GALLIUM ARSENIDES
THRESHOLD CURRENT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SURFACE COATING
426002* - Engineering- Lasers & Masers- (1990-)