Heterogeneity of indium antimonide doped with tellurium, germanium, cadmium, and silicon

Journal Article · Thu May 01 00:00:00 EDT 1986 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:6969405

Gromova, T I; Fridshtand, E S; Kevorkov, M N; Popkov, A N; Yorova, E S

This paper investigates the heterogeneity of crystals of n- and p-type conductivity with a carrier concentration above 1014 cm-/sup 3/ at 77 K, that are doped with tellurium, germanium, cadmium, and silicon. Cadmium is the weak acceptor, whereas germanium and silicon show amphoteric properties, being located mainly at the sublattice points of the Group V element.

• Research Organization: Institute for the RareMetal Industry
• OSTI ID: 6969405
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Vol. 21:12
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY ALLOYS
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
METALLURGICAL EFFECTS
CADMIUM
GERMANIUM
INDIUM ALLOYS
SILICON
TELLURIUM
CARRIER DENSITY
DOPED MATERIALS
INTERMETALLIC COMPOUNDS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
ALLOYS
ELECTRICAL PROPERTIES
ELEMENTS
MATERIALS
METALS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
360102* - Metals & Alloys- Structure & Phase Studies
360104 - Metals & Alloys- Physical Properties