Electrical resistivity of titanium diboride and zirconium diboride
- Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering
- Advanced Refractory Technologies, Inc., Buffalo, NY (United States)
The electrical resistivities of hot-pressed samples of Ti{sub 1{minus}x}Zr{sub x}B{sub 2} (x = 0.0, 0.3, 0.5, 0.7, 1.0) were measured by a four-point ac technique over the range 298 to 1,573 K in an argon atmosphere. The hot-pressed samples for the intermediate compositions were found to be mixtures of two solid-solution phases. The resistivities for all compositions were found to increase linearly with temperature and can be described by {rho}(T) = {rho}{sub 298} + {phi}(T {minus} 298). The room-temperature resistivity {rho}{sub 298} ({mu}{Omega} {center_dot} cm) and the temperature coefficient of resistivity {phi} (n{Omega} {center_dot} cm/K) for ZrB{sub 2} were determined to be 7.8 and 10, both of which increase with the content of TiB{sub 2}. These values for TiB{sub 2} were determined to be 20.4 and 36, respectively.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 69630
- Journal Information:
- Journal of the American Ceramic Society, Vol. 78, Issue 5; Other Information: PBD: May 1995
- Country of Publication:
- United States
- Language:
- English
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