Laser photochemical growth of amorphous silicon at low temperatures and comparison with thermal chemical vapor deposition
Pulsed ArF (193 nm) excimer laser radiation has been used to dissociate disilane (Si/sub 2/H/sub 6/, resulting in photochemically controlled deposition of amorphous Si thin films. A high stability HeNe (6328 A) laser was used for precise in situ monitoring of film deposition rates, under varying deposition conditions. A helium window purge nearly eliminated Si film deposition on the chamber windows. With the excimer laser beam parallel to the substrate, deposition of amorphous Si can be controlled entirely by the photon fluence (negligible background thermal growth) at temperatures from room temperature up to /approximately/400/degree/C. Reasonable photolytic deposition rate (>1 A/sec) are combined with 'digital' control of film thickness (/approx gt/0.02 A/laser pulse). Activation energies of 1.50 (+-0.1) eV and 0.09 (+-0.02) eV were found for pyrolytic and photolytic deposition, respectively. 15 refs., 3 figs.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6957182
- Report Number(s):
- CONF-8711114-5; ON: DE88014547
- Resource Relation:
- Conference: Symposium on high temperature superconductors, Boston, MA, USA, 30 Nov 1987; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ACTIVATION ENERGY
AMORPHOUS STATE
COMPARATIVE EVALUATIONS
EXCIMER LASERS
LASER RADIATION
PHOTOLYSIS
SILANES
THIN FILMS
CHEMICAL COATING
CHEMICAL REACTIONS
DECOMPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY
FILMS
GAS LASERS
HYDRIDES
HYDROGEN COMPOUNDS
LASERS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCHEMICAL REACTIONS
RADIATIONS
SEMIMETALS
SILICON COMPOUNDS
SURFACE COATING
360601* - Other Materials- Preparation & Manufacture