Random telegraph signals from proton-irradiated CCDS
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6953114
- SIRA/UCL Postgraduate Centre, Kent (United Kingdom)
- Sira Ltd., Kent (United Kingdom)
Temporal fluctuations have recently been discovered in the dark current of proton-displacement-damaged CCDs. These fluctuations take the form of random telegraph signals with well defined amplitudes and time constants (for tile high and low dark current states). Temperature and annealing behavior have been studied, as has the dependence on proton fluence. A bistable defect mechanism is proposed.
- OSTI ID:
- 6953114
- Report Number(s):
- CONF-930704-; CODEN: IETNAE
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 40:6Pt1; Conference: NSREC '93: international nuclear and space radiation effects conference, Snowbird, UT (United States), 19-23 Jul 1993; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
Similar Records
Further measurements of random telegraph signals in proton irradiated CCDs
Random telegraph signals in small MOSFET's after x-ray irradiation
Random telegraph signals and low-frequency voltage noise in Y-Ba-Cu-O thin films
Journal Article
·
Fri Dec 01 00:00:00 EST 1995
· IEEE Transactions on Nuclear Science
·
OSTI ID:6953114
Random telegraph signals in small MOSFET's after x-ray irradiation
Conference
·
Sun Dec 01 00:00:00 EST 1991
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:6953114
Random telegraph signals and low-frequency voltage noise in Y-Ba-Cu-O thin films
Journal Article
·
Fri Nov 15 00:00:00 EST 1991
· Journal of Applied Physics; (United States)
·
OSTI ID:6953114
+1 more
Related Subjects
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE-COUPLED DEVICES
PHYSICAL RADIATION EFFECTS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
TEMPERATURE DEPENDENCE
DATA
INFORMATION
NUMERICAL DATA
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
CHARGE-COUPLED DEVICES
PHYSICAL RADIATION EFFECTS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
TEMPERATURE DEPENDENCE
DATA
INFORMATION
NUMERICAL DATA
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems