Advances in resist technology and processing V

Conference · Fri Jan 01 00:00:00 EST 1988

OSTI ID:6952171

MacDonald, S A

These proceedings discuss the technology and processing advances made in the resist materials. The topics included are: Mid-UV photoresists combining chemical amplification and dissolution inhibition; new photoactive compounds for deep-UV lithography; contrast-enhancement materials for mid-UV applications; materials for CMOS and bipolar circuits; effects of ion bombardment in oxygen plasma etching; silicone-based positive photoresist; and ion-etching properties of polysilane polysilane copolymers.

• OSTI ID: 6952171
• Report Number(s): CONF-8802123-; TRN: 90-010981
• Resource Relation: Conference: Advances in resist technology and processing V, Santa Clara, CA (USA), 29 Feb - 2 Mar 1988; Related Information: SPIE - Volume 920
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
COPOLYMERS
PHOTOCHEMISTRY
SILANES
RADIATION EFFECTS
CHEMICAL BONDS
ETCHING
ION IMPLANTATION
LEADING ABSTRACT
MOS TRANSISTORS
OXYGEN
PROCEEDINGS
SOLID-STATE PLASMA
ULTRAVIOLET RADIATION
ABSTRACTS
CHEMISTRY
DOCUMENT TYPES
ELECTROMAGNETIC RADIATION
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC POLYMERS
ORGANIC SILICON COMPOUNDS
PLASMA
POLYMERS
RADIATIONS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SURFACE FINISHING
TRANSISTORS
360603* - Materials- Properties
360605 - Materials- Radiation Effects
656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)
400500 - Photochemistry