Unstable resonator diode laser

Patent · Tue Apr 19 00:00:00 EDT 1988

OSTI ID:6949354

Clark, G L

In a semiconductor diode laser, a structure is described comprising: a generally planar active layer, across which a forward bias voltage is applied, cladding layers adjacent to the active layer, to confine light in a direction perpendicular to the active layer, and first and second facets; in which the first facet is curved to present a concave part-cylindrical reflective surface toward the active layer, and in which the second facet includes a curved portion presenting a convex part-cylindrical reflective surface toward the active layer and a planar portion that is non-reflective. The curvatures of the two curved surfaces have axes of curvature that are approximately perpendicular to the active layer, the curvatures being selected to form an unstable resonator, in which light is confined in a particular sense by the cladding layers and from which energy is out-coupled through the planar portion of the second facet.

• Assignee: TRW Inc., Redondo Beach, CA
• Patent Number(s): US 4739508
• OSTI ID: 6949354
• Resource Relation: Patent File Date: Filed date 6 May 1985
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
RESONATORS
CLADDING
FABRICATION
LAYERS
REFLECTIVITY
SEMICONDUCTOR DIODES
VISIBLE RADIATION
DEPOSITION
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
EQUIPMENT
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATIONS
SEMICONDUCTOR DEVICES
SURFACE COATING
SURFACE PROPERTIES
420300* - Engineering- Lasers- (-1989)