Method of making indium phosphide devices

Patent · Tue Apr 19 00:00:00 EDT 1988

OSTI ID:6948801

Johnson, Jr, W D; Long, J A; Macrander, A T; Schwartz, B; Singh, S

A process for fabricating a device is described comprising substrate and a first region contacting at least a portion of the surface of the substrate. The substrate comprises n-type or p-type indium phosphide and the first region comprising semi-insulating indium phosphide doped with iron and grown by MOCVD and ion-implanting at least a portion of the first region for carrier-activation.

• Assignee: American Telephone and Telegraph Co., AT and T Bell Labs., Murray Hill, NJ
• Patent Number(s): US 4738934
• OSTI ID: 6948801
• Resource Relation: Patent File Date: Filed date 16 May 1986
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
CHEMICAL VAPOR DEPOSITION
SEMICONDUCTOR DEVICES
FABRICATION
SUBSTRATES
CRYSTAL DOPING
DOPED MATERIALS
ELECTRICAL INSULATION
ION IMPLANTATION
IRON
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
CHEMICAL COATING
DEPOSITION
ELEMENTS
INDIUM COMPOUNDS
MATERIALS
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR MATERIALS
SURFACE COATING
TRANSITION ELEMENTS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360601 - Other Materials- Preparation & Manufacture