Injection-locking characteristics of gain-guided diode laser arrays with an on-chip'' master laser

Journal Article · Mon Apr 16 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103162· OSTI ID:6944257

Hohimer, J P; Myers, D R; Brennan, T M; Hammons, B E ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)

We report measurements of the injection-locking characteristics of a high-power continuous-wave diode laser array with an on-chip independently controlled master laser. This integrated injection-locked array emits a near-diffraction-limited single-lobed output beam at cw power levels up to 220 mW/facet. By controlling the current to the master laser, the single-lobed output beam can be electronically steered over a far-field angle of {gt}1.7{degree}. We also report preliminary studies of the coupling interaction in these integrated devices.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6944257
• Journal Information: Applied Physics Letters; (USA), Vol. 56:16; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
MODE LOCKING
GAIN
LASER CAVITIES
SANDIA LABORATORIES
AMPLIFICATION
LASERS
NATIONAL ORGANIZATIONS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
US AEC
US DOE
US ERDA
US ORGANIZATIONS
426002* - Engineering- Lasers & Masers- (1990-)