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Title: Molybdenum etching with chlorine atoms and molecular chlorine plasmas

Journal Article · · J. Vac. Sci. Technol., B; (United States)
DOI:https://doi.org/10.1116/1.584218· OSTI ID:6936619

Thin films of molybdenum were etched both within and downstream from a Cl/sub 2/ plasma at 200-mTorr pressure and temperatures below 180 /sup 0/C. When samples were positioned downstream from the discharge, etching proceeded solely by chemical reaction of the film with chlorine atoms. Without a discharge, molecular chlorine did not etch molybdenum. Downstream and in-discharge etch rates were <20 nm/min and etching by atoms was not observed below 100 /sup 0/C. The chemical reaction between chlorine atoms and molybdenum was proportional to the gas phase Cl atom mole fraction.

Research Organization:
Department of Chemical Engineering, University of California, Berkeley, California 94720
OSTI ID:
6936619
Journal Information:
J. Vac. Sci. Technol., B; (United States), Vol. 6:5
Country of Publication:
United States
Language:
English