Reduction of degradation in vapor phase transported InP/InGaAsP mushroom stripe lasers

Journal Article · Mon Oct 03 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100022· OSTI ID:6928809

Jung, H; Burkhardt, E G; Pfister, W

The rapid degradation rate generally observed in InP/InGaAsP mushroom stripe lasers can be considerably decreased by regrowing the open sidewalls of the active stripe with low-doped InP in a second epitaxial step using the hydride vapor phase transport technique. This technique does not change the fundamental laser parameters like light-current and current-voltage characteristics. Because of this drastic reduction in degradation, the vapor phase epitaxy regrown InP/InGaAsP mushroom laser seems to be an interesting candidate for application in optical communication.

• Research Organization: AEG Aktiengesellschaft, Forschungsinstitut Ulm, D-79 Ulm, West Germany
• OSTI ID: 6928809
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 53:14
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
PERFORMANCE
RELIABILITY
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
N-TYPE CONDUCTORS
VAPOR PHASE EPITAXY
ARSENIC COMPOUNDS
ARSENIDES
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GALLIUM COMPOUNDS
INDIUM COMPOUNDS
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MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
420300* - Engineering- Lasers- (-1989)