Radiation tolerance of the FOXFET biasing scheme for AC-coupled Si microstrip detectors

Conference · Wed Dec 01 00:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6908028

Bacchetta, N; Gotra, Yu ^[1]; Bisello, D; Da Ros, R; Giraldo, A ^[2]; Canali, C ^[3]; Fuochi, P G ^[4]; Fusaro, G ^[5]; Paccagnella, A ^[6]; Verzellesi, G ^[7]

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1. INFN, Padova (Italy)
2. INFN, Padova (Italy) Univ. di Padova (Italy). Dipt. di Fisica
3. INFN, Padova (Italy) Univ. di Modena (Italy). Facolta di Ingegneria
4. CNR-FRAE, Bologna (Italy)
5. Univ. di Padova (Italy). Dept. di Elettronica e Informatica
6. INFN, Padova (Italy) Univ. di Cagliari (Italy). Instituto di Elettrotecnica
7. INFN, Padova (Italy) Univ. di Padova (Italy). Dept. di Elettronica e Informatica

The radiation response of FOXFETs has been studied for proton, gamma and neutron exposures. The punch-through behavior, which represents the normal FET operating conditions in Si microstrip detectors, has been found to be much less sensitive to radiation damage than threshold voltage. The device performance has been elucidated by means of two-dimensional simulations. The main radiation effects have been also taken into account in the numerical analysis and separately examined.

• OSTI ID: 6908028
• Report Number(s): CONF-930704-; CODEN: IETNAE
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 40:6Pt1; Conference: NSREC '93: international nuclear and space radiation effects conference, Snowbird, UT (United States), 19-23 Jul 1993; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
FIELD EFFECT TRANSISTORS
PHYSICAL RADIATION EFFECTS
SI SEMICONDUCTOR DETECTORS
COMPUTERIZED SIMULATION
ELECTRICAL PROPERTIES
RESPONSE FUNCTIONS
FUNCTIONS
MEASURING INSTRUMENTS
PHYSICAL PROPERTIES
RADIATION DETECTORS
RADIATION EFFECTS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems