Nucleation controlled phase selection in vanadium/amorphous-silicon multilayer thin films

Journal Article · Tue May 01 00:00:00 EDT 1990 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)

DOI:https://doi.org/10.1116/1.576766· OSTI ID:6901513

Clevenger, L A; Thompson, C V; de Avillez, R R; Ma, E ^[1]

---

1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (USA)

Cross-sectional transmission electron microscopy, isothermal and constant-heating-rate calorimetry, and thin film x-ray diffraction have been used to investigate amorphous and crystalline silicide phase formation in vanadium/amorphous-silicon multilayer thin films. The atomic concentration ratio of the films was one V atom to two Si atoms and the modulation period was either 14 or 50 nm. The first silicide phase to form at the vanadium/amorphous-silicon interface was amorphous-vanadium--silicide. Heating to temperatures above 750 K caused crystalline VSi{sub 2} to form at the amorphous-vanadium--silicide/amorphous-silicon interface. Analysis of cross-sectional transmission electron microscopy and both isothermal and constant-scan-rate calorimetric data suggest that nucleation barriers control the formation of crystalline VSi{sub 2}.

• OSTI ID: 6901513
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Vol. 8:3; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
CHEMICAL REACTIONS
VANADIUM
AMORPHOUS STATE
DEPOSITION
INTERFACES
NUCLEATION
PHASE TRANSFORMATIONS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VANADIUM SILICIDES
VERY HIGH TEMPERATURE
X-RAY DIFFRACTION
COHERENT SCATTERING
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
FILMS
METALS
MICROSCOPY
SCATTERING
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
VANADIUM COMPOUNDS
360104* - Metals & Alloys- Physical Properties