Thermophysical properties data on molten semiconductors

Journal Article · Wed Jan 01 00:00:00 EST 1992 · International Journal of Thermophysics; (United States)

DOI:https://doi.org/10.1007/BF01141216· OSTI ID:6901219

Nakamura, S; Hibiya, T ^[1]

---

1. NEC Corp., Ibaraki (Japan)

Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSh, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly. 77 refs., 9 figs., 3 tabs.

• OSTI ID: 6901219
• Journal Information: International Journal of Thermophysics; (United States), Vol. 13:6; ISSN 0195-928X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
PHYSICAL PROPERTIES
THERMODYNAMIC PROPERTIES
EMISSIVITY
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GERMANIUM
INDIUM PHOSPHIDES
SILICON
SURFACE TENSION
THERMAL CONDUCTIVITY
VISCOSITY
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
METALS
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMIMETALS
SURFACE PROPERTIES
360606* - Other Materials- Physical Properties- (1992-)