Method for microwave plasma assisted supersonic gas jet deposition of thin films
A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which reactant gas is introduced, a tip of the inner nozzle being recessed from the vacuum chamber port within the outer nozzle interior cavity, and a microwave discharge device configured about the apparatus for generating a discharge in the carrier gas and reactant gas only in a portion of the outer nozzle interior cavity extending from approximately the inner nozzle tip towards the vacuum chamber. A supersonic free jet of carrier gas transports vapor species generated in the microwave discharge to the surface of the substrate to form a thin film on the substrate. The substrate can be translated from the supersonic jet to a second supersonic jet in less time than needed to complete film formation so that the film is chemically composed of chemical reaction products of vapor species in the jets. 5 figs.
- DOE Contract Number:
- FG02-88ER13818
- Assignee:
- Jet Process Corp., New Haven, CT (United States)
- Patent Number(s):
- US 5356672; A
- Application Number:
- PPN: US 7-521100
- OSTI ID:
- 6897079
- Resource Relation:
- Patent File Date: 9 May 1990
- Country of Publication:
- United States
- Language:
- English
Similar Records
Microwave plasma assisted supersonic gas jet deposition of thin film materials
Microwave plasma assisted supersonic gas jet deposition of thin film materials
Related Subjects
THIN FILMS
CHEMICAL VAPOR DEPOSITION
EQUIPMENT
SUPERSONIC FLOW
VACUUM SYSTEMS
VAPOR DEPOSITED COATINGS
CHEMICAL COATING
COATINGS
DEPOSITION
FILMS
FLUID FLOW
SURFACE COATING
360101* - Metals & Alloys- Preparation & Fabrication
360201 - Ceramics
Cermets
& Refractories- Preparation & Fabrication