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Title: Operating characteristics of single-quantum-well AlGaAs/GaAs high-power lasers

Journal Article · · IEEE J. Quant. Electron.; (United States)
DOI:https://doi.org/10.1109/3.962· OSTI ID:6841863

The operating characteristics of six types of graded-index separate confinement heterostructure single-quantum-well wide-stripe lasers grown by metalorganic chemical chemical vapor deposition are reported. The lasers exhibit intrinsic mode losses as low as 3 cm/sup -1/ and internal quantum efficiencies near unity. Measured differential gain coefficients range from 3.7 to 6.5 cm/A, and extrapolated transparency current densities range from 54 to 145 A/cm/sup 2/. These wide-stripe lasers are typically multilongitudinal mode and exhibit narrowing of the gain envelope and lateral far-field pattern as the cavity length increases. The high value of T/sub 0/ (>200 K) at long cavity lengths in conjunction with the low current density permits junction-side-up operation to CW optical powers of 0.5 - 0.7 W/facet, at which level catastrophic facet damage occurs on the uncoated devices. A maximum power conversion efficiency of 57 percent was measured on the laser structure exhibiting the lowest threshold current.

Research Organization:
Applied Solar Energy Corp., City of Industry, CA (US)
OSTI ID:
6841863
Journal Information:
IEEE J. Quant. Electron.; (United States), Vol. 24:7
Country of Publication:
United States
Language:
English