Continued development of metallization for GaAs concentrator cells
The objective of this work was the integration of thermally stable metallizations with a high-efficiency GaAs concentrator cell process. For p-GaAs we used a Pt-TiN-Au metallization developed under a previous Sandia Contract. For n-GaAs the best results were obtained for AuGe-TiN-Au. Baseline p/n cells with a CrAu metallization achieved efficiencies of 25.4% at 200 suns. Efficiencies were about 22% at one sun. At one sun, p/n cells with high-temperature contacts were 22.2% efficient, showing that there is no efficiency penalty with the high-temperature metallization. Development efforts on n/p cells yielded high short-circuit currents and open-circuit voltages, with both conventional and high-temperature metallizations. Thermal annealing tests showed that cells with the Pt-TiN-Au metallization were more stable than those with the baseline metallization, withstanding a 15-minute anneal at 500/degree/C with negligible efficiency degradation. 22 refs., 64 figs., 54 tabs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6832483
- Report Number(s):
- SAND-88-7033; ON: DE89005491
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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PERFORMANCE TESTING
ANTIREFLECTION COATINGS
EFFICIENCY
EXPERIMENTAL DATA
GOLD
HIGH TEMPERATURE
PLATINUM
TITANIUM
COATINGS
DATA
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
INFORMATION
METALS
NUMERICAL DATA
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PHOTOVOLTAIC CELLS
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140501* - Solar Energy Conversion- Photovoltaic Conversion