High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

Arent, D J; Brovelli, L; Jaeckel, H; Marclay, E; Meier, H P

doi:10.1063/1.103028

Title: High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

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Abstract

Strained single quantum well InGaAs/AlGaAs graded-index separate confinement heterostructure lasers have been grown by molecular beam epitaxy over nonplanar substrates. In addition to the low threshold currents provided {ital in} {ital situ} by lateral current blocking {ital pn} junctions obtained by plane-dependent doping of the amphoteric Si dopant, we observe variations in lasing wavelength, efficiency, and internal absorption as a function of the central (100) facet length. These variations are associated with increased indium composition in the strained quantum well which arises from incorporation of adatoms migrating from the low-growth (311){ital A} side facets to the preferential growth (100) active area facets. Uncoated devices (750 {mu}m{times}4 {mu}m) have been found to have threshold currents as low as 6 mA ({ital J}{sub th}=320 A/cm{sup 2}) and exhibit single-mode behavior to greater than 100 mW at a wavelength of {similar to}1.0 {mu}m when reflectivity modified (90%/10%).

Authors:

Arent, D J; Brovelli, L; Jaeckel, H; Marclay, E; Meier, H P ^[1]

IBM Research Division, Zurich Research Laboratory, 8803 Rueschlikon, Switzerland (CH)

Publication Date:: Mon May 14 00:00:00 EDT 1990

OSTI Identifier:: 6813116

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters; (USA)

Additional Journal Information:: Journal Volume: 56:20; Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; 36 MATERIALS SCIENCE; SEMICONDUCTOR LASERS; FABRICATION; THRESHOLD CURRENT; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-); 360602 - Other Materials- Structure & Phase Studies

Citation Formats


                    Arent, D J, Brovelli, L, Jaeckel, H, Marclay, E, and Meier, H P. High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates.  United States: N. p., 1990. 
        Web.  doi:10.1063/1.103028.

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                    Arent, D J, Brovelli, L, Jaeckel, H, Marclay, E, & Meier, H P. High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates.  United States.  https://doi.org/10.1063/1.103028

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                    Arent, D J, Brovelli, L, Jaeckel, H, Marclay, E, and Meier, H P. 1990.  
        "High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates".  United States.  https://doi.org/10.1063/1.103028.

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@article{osti_6813116,

  title        = {High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates},

  author       = {Arent, D J and Brovelli, L and Jaeckel, H and Marclay, E and Meier, H P},

  abstractNote = {Strained single quantum well InGaAs/AlGaAs graded-index separate confinement heterostructure lasers have been grown by molecular beam epitaxy over nonplanar substrates. In addition to the low threshold currents provided {ital in} {ital situ} by lateral current blocking {ital pn} junctions obtained by plane-dependent doping of the amphoteric Si dopant, we observe variations in lasing wavelength, efficiency, and internal absorption as a function of the central (100) facet length. These variations are associated with increased indium composition in the strained quantum well which arises from incorporation of adatoms migrating from the low-growth (311){ital A} side facets to the preferential growth (100) active area facets. Uncoated devices (750 {mu}m{times}4 {mu}m) have been found to have threshold currents as low as 6 mA ({ital J}{sub th}=320 A/cm{sup 2}) and exhibit single-mode behavior to greater than 100 mW at a wavelength of {similar to}1.0 {mu}m when reflectivity modified (90%/10%).},

  doi          = {10.1063/1.103028},

  url          = {https://www.osti.gov/biblio/6813116},
  journal      = {Applied Physics Letters; (USA)},

  issn         = {0003-6951},

  number       = ,

  volume       = 56:20,

  place        = {United States},

  year         = {Mon May 14 00:00:00 EDT 1990},

  month        = {Mon May 14 00:00:00 EDT 1990}

}

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