Substrate solder barriers for semiconductor epilayer growth
During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- SNL; EDB-88-179048
- Patent Number(s):
- PATENTS-US-A6111488
- OSTI ID:
- 6808290
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PROTECTIVE COATINGS
GOLD
SPUTTERING
TUNGSTEN CARBIDES
INDIUM
INVENTIONS
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
ARSENIC COMPOUNDS
ARSENIDES
CARBIDES
CARBON COMPOUNDS
COATINGS
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
MATERIALS
METALS
PNICTIDES
REFRACTORY METAL COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN COMPOUNDS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360204 - Ceramics
Cermets
& Refractories- Physical Properties
360601 - Other Materials- Preparation & Manufacture