Model for ion-implantation-induced improvements of photoferroelectric imaging in lead lanthanum zirconate titanate ceramics
Studies of photoferroelectric image storage in H-, He-, and, more recently, Ar-implanted /(PLZT) lead lanthanum zirconate titanate reveal that the photosensitivity can be significantly increased by ion implantation into the image storage surface. For example, the photosensitivity after implantation with 5 x 10/sup 14/ 500-keV Ar/cm/sup 2/ is increased by about three orders of magnitude over that of unimplanted PLZT. The increase in photosensitivity results from a decrease in dark conductivity and changes in the photoconductivity of the implanted layer. We present a phenomenological model which describes the photosensitivity enhancement obtained by ion implantation. This model takes into account both light- and ion- implantation-induced changes in conductivity and gives quantitative agreement with the measured changes in the coercive voltage with near-UV light intensity for ion-implantated PLZT.
- Research Organization:
- Sandia National Laboratories, Alberquerque, New Mexico, 87185
- DOE Contract Number:
- DE-AC04-76-DP00789
- OSTI ID:
- 6791617
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 37:9
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
LANTHANUM COMPOUNDS
ELECTRIC CONDUCTIVITY
ION IMPLANTATION
LEAD COMPOUNDS
TITANATES
ZIRCONATES
CERAMICS
COMPARATIVE EVALUATIONS
FERROELECTRIC MATERIALS
MATHEMATICAL MODELS
PHOTOELECTRIC EFFECT
SENSITIVITY
THEORETICAL DATA
ULTRAVIOLET RADIATION
DATA
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
INFORMATION
NUMERICAL DATA
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
RARE EARTH COMPOUNDS
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ZIRCONIUM COMPOUNDS
360204* - Ceramics
Cermets
& Refractories- Physical Properties