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Title: Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.100485· OSTI ID:6775535

We demonstrate that lanthanum gallate (LaGaO/sub 3/) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa/sub 2/Cu/sub 3/O/sub 7-//sub x/, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (epsilonapprox. =25) and low dielectric losses. Epitaxial YBa/sub 2/Cu/sub 3/O/sub 7-//sub x/ films grown on LaGaO/sub 3/ single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

Research Organization:
IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
OSTI ID:
6775535
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 53:19
Country of Publication:
United States
Language:
English

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