Effect of temperature on Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3})/GaN metal{endash}oxide{endash}semiconductor field-effect transistors
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32606 (United States)
- Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
- EMCORE Inc., Somerset, New Jersey 07061 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32606 (United States)
Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal{endash}oxide{endash}semiconductor field-effect transistor (MOSFET). Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal{endash}semiconductor field-effect transistor fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 {degree}C. Modeling of the effect of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 677217
- Journal Information:
- Applied Physics Letters, Vol. 73, Issue 26; Other Information: PBD: Dec 1998
- Country of Publication:
- United States
- Language:
- English
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