Influence of perimeter recombination on high-efficiency GaAs p/n heteroface solar cells

Journal Article · Mon Aug 01 00:00:00 EDT 1988 · IEEE Electron Device Lett.; (United States)

DOI:https://doi.org/10.1109/55.746· OSTI ID:6770977

De Moulin, P D; Lundstrom, M S; Carpenter, M S; Melloch, M R ^[1]; Tobin, S P ^[2]

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1. School of Electrical Engineering, Purdue Univ., West Lafayette, IN (US)
2. Spire Corp., Bedford, MA (US)

Perimeter recombination currents have been characterized for 0.5 x 0.5- and 2 x 2-cm/sup 2/ p/n GaAs solar cells. Measurements show that perimeter recombination dominates the n = 2 dark current component of these high-efficiency solar cells. The results also suggest that perimeter recombination will be substantial even in much larger area solar cells. Although little influence on open-circuit voltage is expected, perimeter recombination may adversely affect the cell's one-sun fill factor. Because of its importance to one-sun applications, recombination at the junction perimeter must be suppressed before GaAs solar cells approach their limiting conversion efficiencies.

• OSTI ID: 6770977
• Journal Information: IEEE Electron Device Lett.; (United States), Vol. 9:8
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
GALLIUM ARSENIDE SOLAR CELLS
RECOMBINATION
ENERGY EFFICIENCY
HETEROJUNCTIONS
MEASURING METHODS
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
360603 - Materials- Properties