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Title: Thermally stable, buried high-resistance layers in [ital p]-type InP obtained by MeV energy Ti implantation

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.354011· OSTI ID:6769584
; ; ;  [1];  [2]
  1. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 (United States)
  2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

High-energy Ti[sup +] ions ranging from 1 to 5 MeV were implanted into [ital p]-type InP:Zn (for two different zinc concentrations) at both room temperature and 200 [degree]C. The range statistics for Ti implanted at various energies were calculated by analyzing the as-implanted profiles determined by secondary-ion mass spectrometry. Ti did not redistribute during post-implantation annealing except for a slight indiffusion, irrespective of the implant or annealing temperatures used. This behavior is different from the behavior of other implanted transition metals (Fe and Co) in InP, which redistributed highly when the implants were performed at room temperature. In the MeV Ti-implanted InP:Zn the background Zn showed a small degree of redistribution. Rutherford backscattering measurements showed a near virgin lattice perfection for 200 [degree]C implants after annealing. Buried layers with intrinsic resistivity were obtained by MeV Ti implantation in InP:Zn ([ital p]=5[times]10[sup 16] cm[sup [minus]3]).

DOE Contract Number:
AC05-84OR21400
OSTI ID:
6769584
Journal Information:
Journal of Applied Physics; (United States), Vol. 73:11; ISSN 0021-8979
Country of Publication:
United States
Language:
English