Ion-implanted high-microwave-power indium phosphide transistors

Technical Report · Fri Sep 01 00:00:00 EDT 1989

OSTI ID:6763542

Nguyen, R

Indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) have demonstrated substantially higher output power density at microwave frequencies compared to gallium arsenide metal-semiconductor field-effect transistors (MESFETs). Presented here are the microwave characteristics from an investigation of encapsulated rapid thermal annealing (RTA) for the fabrication of InP power MISFETs with ion-implanted source, drain, and active channel regions. The MISFETs had a gate length of 1.4 microns. They were made with individual gate finger widths of 100 or 125 microns, and six to ten gate fingers per device were used to make MISFETs with total gate widths of 0.75, 0.8, or 1 mm. The source and drain contact regions and the channel region of the MISFETs were fabricated using silicon implants in semi-insulating InP at energies from 60 to 360 keV with doses from 10 to the 12th power to 5.6 x 10 to the 14th power/sq cm. The implants were activated using RTA at 700 C for 30 s in N2 or H2 ambients using a silicon nitride encapsulant. The channel region was chemically recessed prior to depositing approximately 1000 A of SiO2 for the gate insulator. The high power and high efficiency of InP MISFETs were characterized at 9.7 GHz, and the output microwave power density for the RTA conditions used was as high as 2.4 W/mm. For a 1 W input at 9.7 GHz gains up to 3.7 dB were observed, with an associated power-added efficiency of 29 percent. The output power density achieved was 70 percent greater than has been achieved with GaAs MESFETs.

• Research Organization: Naval Ocean Systems Center, San Diego, CA (USA)
• OSTI ID: 6763542
• Report Number(s): AD-A-224116/4/XAB
• Resource Relation: Other Information: Pub. in IEEE Transactions on Microwave Theory and Techniques, Vol. 37, No. 9, 1321-1326(Sep 1989)
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
FIELD EFFECT TRANSISTORS
EFFICIENCY
FABRICATION
MIS TRANSISTORS
ANNEALING
DENSITY
ELECTRICAL INSULATION
ELECTRO-OPTICAL EFFECTS
ENCAPSULATION
GATING CIRCUITS
INDIUM PHOSPHIDES
ION IMPLANTATION
MICROWAVE RADIATION
POWER
RF SYSTEMS
SEMICONDUCTOR MATERIALS
SILICON
SILICON NITRIDES
THERMAL RADIATION
WIDTH
DIMENSIONS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
HEAT TREATMENTS
INDIUM COMPOUNDS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON COMPOUNDS
TRANSISTORS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)