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Title: Dependence of astigmatism, far-field pattern, and spectral envelope width on active layer thickness of gain guided lasers with narrow stripe geometry

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.94660· OSTI ID:6752286

The effects of active layer thickness on the astigmatism, the angle of far-field pattern width parallel to the junction, and the spectral envelope width of a gain guided laser with a narrow stripe geometry have been investigated analytically and experimentally. It is concluded that a large level of astigmatism, a narrow far-field pattern width, and a rapid convergence of the spectral envelope width are inherent to the gain guided lasers with thin active layers.

Research Organization:
Semiconductor Research Department, Semiconductor Group, Sony Corporation, Atsugi-Plant, 4-14-1 Asahi-cho, Atsugi-shi 243, Japan
OSTI ID:
6752286
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 44:12
Country of Publication:
United States
Language:
English