Dependence of astigmatism, far-field pattern, and spectral envelope width on active layer thickness of gain guided lasers with narrow stripe geometry
Journal Article
·
· Appl. Phys. Lett.; (United States)
The effects of active layer thickness on the astigmatism, the angle of far-field pattern width parallel to the junction, and the spectral envelope width of a gain guided laser with a narrow stripe geometry have been investigated analytically and experimentally. It is concluded that a large level of astigmatism, a narrow far-field pattern width, and a rapid convergence of the spectral envelope width are inherent to the gain guided lasers with thin active layers.
- Research Organization:
- Semiconductor Research Department, Semiconductor Group, Sony Corporation, Atsugi-Plant, 4-14-1 Asahi-cho, Atsugi-shi 243, Japan
- OSTI ID:
- 6752286
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 44:12
- Country of Publication:
- United States
- Language:
- English
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