Molecular dynamics-based ion-surface interaction models for ionized physical vapor deposition feature scale simulations

Journal Article · Tue Dec 01 00:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.122917· OSTI ID:675107

Coronell, D G ^[1]; Hansen, D E; Voter, A F ^[2]; Liu, C; Liu, X ^[3]; Kress, J D ^[2]

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1. Predictive Engineering Laboratory, Motorola Semiconductor Products Sector, Austin, Texas 78721 (United States)
2. Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
3. Predictive Engineering Laboratory, Motorola Semiconductor Products Sector, Los Alamos, New Mexico 87545 (United States)

A procedure is presented for incorporating the results of atomistic simulations of ion{endash}surface interactions into integrated circuit topographic simulations of ionized physical vapor deposition (PVD). Energy and angular dependent sticking probabilities for energetic Cu atoms impacting a {l_brace}111{r_brace} Cu surface, obtained from molecular dynamics simulations, were implemented in a simple Monte Carlo flux model. The resulting flux-averaged Cu sticking probability was found to vary significantly with position within submicron features and with the feature geometry. This illustrates the shortcomings of a constant (energy and angle independent) sticking probability model for ionized PVD. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 675107
• Journal Information: Applied Physics Letters, Vol. 73, Issue 26; Other Information: PBD: Dec 1998
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ION COLLISIONS
PHYSICAL VAPOR DEPOSITION
SIMULATION
MOLECULAR DYNAMICS METHOD
INTEGRATED CIRCUITS
COPPER
MONTE CARLO METHOD
SURFACES
ANGULAR DISTRIBUTION