Growth of oxide exchange bias layers

Patent · Tue Jul 21 00:00:00 EDT 1998

OSTI ID:672582

Chaiken, A; Michel, R P

An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bias layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200 C, the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 {angstrom}/sec. The resulting NiO film was amorphous. 4 figs.

• Research Organization: Univ. of California (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Univ. of California, Oakland, CA (United States)
• Patent Number(s): US 5,783,262/A/
• Application Number: PAN: 8-762,087
• OSTI ID: 672582
• Resource Relation: Other Information: PBD: 21 Jul 1998
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
NICKEL OXIDES
COBALT OXIDES
FABRICATION
ANTIFERROMAGNETIC MATERIALS
SPUTTERING
ION BEAMS
USES
AMORPHOUS STATE