Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using ``safe`` silicon source gas
Patent
·
OSTI ID:672509
A method is described for producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament. 7 figs.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- Patent Number(s):
- US 5,776,819/A/
- Application Number:
- PAN: 8-222,720
- OSTI ID:
- 672509
- Resource Relation:
- Other Information: PBD: 7 Jul 1998
- Country of Publication:
- United States
- Language:
- English
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