Plasma source for ion and electron beam lithography
- Lawrence Berkeley National Laboratory, University of California, Berkeley, California (United States)
- Technical University of Vienna, Vienna (Austria)
- Fraunhofer Institute, Berlin (Germany)
A new plasma source configuration, coaxial source, has been developed at the Lawrence Berkeley National Laboratory suitable for ion and electron beam lithography applications. The axial ion energy spread and electron temperature of the multicusp ion source have been reduced considerably from 2 and 0.3 eV to a record low of 0.6 eV by employing a coaxial source arrangement. Results of ion projection lithographic exposure at the Fraunhofer Institute demonstrate that feature size less than 65 nm can be achieved by using a filter-equipped multicusp ion source. Langmuir probe measurements also show that very low energy spread electron beams can be obtained with the multicusp plasma generator. {copyright} {ital 1998 American Vacuum Society.}
- OSTI ID:
- 670204
- Report Number(s):
- CONF-9805132-; ISSN 0734-211X; TRN: 99:001276
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 16, Issue 6; Conference: 42. international conference on electron, ion, and photon beam technology and nanofabrication, Chicago, IL (United States), 26-29 May 1998; Other Information: PBD: Nov 1998
- Country of Publication:
- United States
- Language:
- English
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