Nonlinear refractive index spectroscopy in GaAs

Journal Article · Mon Mar 01 00:00:00 EST 1993 · Applied Physics Communications; (United States)

OSTI ID:6697845

Lepore, M ^[1]

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1. Via Orabona, Bari (Italy)

In order to test a simplified approach to evaluate the carrier induced refractive index change in III-V semiconductors, the optically induced changes in refractive index have been measured in an AlGaAs waveguide structure in a wavelength range varying between 875 and 900 nm using a Mach-Zehnder interferometer set-up. The experimental results have been compared with the above-mentioned theoretical model and a quite good agreement has been found.

• OSTI ID: 6697845
• Journal Information: Applied Physics Communications; (United States), Vol. 12:1; ISSN 0277-9374
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
EXPERIMENTAL DATA
SEMICONDUCTOR MATERIALS
CHARGE CARRIERS
REFRACTIVE INDEX
WAVEGUIDES
SPECTROSCOPY
ALUMINIUM COMPOUNDS
FREQUENCY RANGE
INTERMETALLIC COMPOUNDS
MACH-ZEHNDER INTERFEROMETER
OPTICAL EQUIPMENT
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
DATA
EQUIPMENT
GALLIUM COMPOUNDS
INFORMATION
INTERFEROMETERS
MATERIALS
MEASURING INSTRUMENTS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
664200* - Spectra of Atoms & Molecules & their Interactions with Photons- (1992-)
360104 - Metals & Alloys- Physical Properties