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Title: Flame annealing of ion implanted silicon

Abstract

The authors investigated flame annealing of ion implantation damage (consisting of amorphous layers and dislocation loops) in (100) and (111) silicon substrates. The temperature of a hydrogen flame was varied from 1050 to 1200/sup 0/C and the interaction time from 5 to 10 seconds. Detailed TEM results showed that a defect-free annealing of amorphous layers by solid-phase-epitaxial growth could be achieved up to a certain concentration. However, dislocation loops in the region below the amorphous layer exhibited coarsening, i.e., the average loop size increased while the number density of loops decreased. Above a critical loop density, which was found to be a function of ion implantation variables and substrate temperature, formation of 90/sup 0/ dislocations (a cross-grid of dislocation in (100) and a triangular grid in (111) specimens) were observed. Electrical (Van der Pauw) measurements indicated nearly a complete electrical activation of dopants with mobility comparable to pulsed laser annealed specimens. The characteristics of p-n junction diodes showed a good diode perfection factor of 1.20-1.25 and low reverse bias currents.

Authors:
;
Publication Date:
Research Org.:
Oak Ridge National Lab., TN
OSTI Identifier:
6692969
DOE Contract Number:  
W-7405-ENG-26
Resource Type:
Journal Article
Journal Name:
Mater. Res. Soc. Symp. Proc.; (United States)
Additional Journal Information:
Journal Volume: 13
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; ANNEALING; ELECTRICAL PROPERTIES; CRYSTAL DEFECTS; CRYSTAL GROWTH; DOPED MATERIALS; EPITAXY; ION IMPLANTATION; LASER RADIATION; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; MATERIALS; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS; 360601* - Other Materials- Preparation & Manufacture; 360603 - Materials- Properties

Citation Formats

Narayan, J, and Young, R T. Flame annealing of ion implanted silicon. United States: N. p., 1983. Web.
Narayan, J, & Young, R T. Flame annealing of ion implanted silicon. United States.
Narayan, J, and Young, R T. 1983. "Flame annealing of ion implanted silicon". United States.
@article{osti_6692969,
title = {Flame annealing of ion implanted silicon},
author = {Narayan, J and Young, R T},
abstractNote = {The authors investigated flame annealing of ion implantation damage (consisting of amorphous layers and dislocation loops) in (100) and (111) silicon substrates. The temperature of a hydrogen flame was varied from 1050 to 1200/sup 0/C and the interaction time from 5 to 10 seconds. Detailed TEM results showed that a defect-free annealing of amorphous layers by solid-phase-epitaxial growth could be achieved up to a certain concentration. However, dislocation loops in the region below the amorphous layer exhibited coarsening, i.e., the average loop size increased while the number density of loops decreased. Above a critical loop density, which was found to be a function of ion implantation variables and substrate temperature, formation of 90/sup 0/ dislocations (a cross-grid of dislocation in (100) and a triangular grid in (111) specimens) were observed. Electrical (Van der Pauw) measurements indicated nearly a complete electrical activation of dopants with mobility comparable to pulsed laser annealed specimens. The characteristics of p-n junction diodes showed a good diode perfection factor of 1.20-1.25 and low reverse bias currents.},
doi = {},
url = {https://www.osti.gov/biblio/6692969}, journal = {Mater. Res. Soc. Symp. Proc.; (United States)},
number = ,
volume = 13,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 1983},
month = {Sat Jan 01 00:00:00 EST 1983}
}