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Title: Task B: Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules: Semiannual subcontract report, 1 February 1987--31 July 1987

Abstract

This semiannual report presents results of research on stable, high-efficiency, large-area, amorphous-silicon-based submodules. High conversion efficiencies (up to 11.95%) were obtained in small-area, single-junction, a-Si solar cells by using textured tin oxide, superlattice p-layers, graded carbon concentrations near the p-i interface, and highly relective ITO/silver back contacts. Researchers also fabricated single-junction a-SiC and a-SiGe p-i-n cells with efficiencies of 9%--11%. Stacked-junction cells of a-SiC/a-Si, a-SiC/a-SiGe, and a-SiC/a-Si/a-SiGe were fabricated, and efficiencies of about 10% were achieved in some of them. Boron-doped microcrystalline SiC films were developed that contain up to 6 at.% C with conductivities of 3 /times/ 10/sup /minus/3/ ohm /sup /minus/1/ cm/sup /minus/1/ at room temperature and activation energies of 0.11 eV. Stability studies showed that light-induced degradation is usually enhanced by the presence of C grading near the p-i interface. Light-induced degradation of the fill factor of p-i-n cells strongly correlates with optical absorption at 1.2 eV, as measured by photothermal deflection spectroscopy. 11 refs., 70 figs., 16 tabs.

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Solar Energy Research Inst., Golden, CO (USA); Solarex Corp., Newtown, PA (USA). Thin Film Div.
OSTI Identifier:
6628879
Report Number(s):
SERI/STR-211-3375
ON: DE89000843
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Technical Report
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; PERFORMANCE TESTING; AMORPHOUS STATE; EFFICIENCY; EXPERIMENTAL DATA; FABRICATION; PHOTOVOLTAIC CELLS; PROGRESS REPORT; TIN OXIDES; CHALCOGENIDES; DATA; DIRECT ENERGY CONVERTERS; DOCUMENT TYPES; EQUIPMENT; INFORMATION; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; SOLAR CELLS; SOLAR EQUIPMENT; TESTING; TIN COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Carlson, D E, Arya, R R, Bennett, M S, Catalano, A, D'Aiello, R V, Dickson, C R, Fortmann, C M, Goldstein, B, Morris, J, and Newton, J L. Task B: Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules: Semiannual subcontract report, 1 February 1987--31 July 1987. United States: N. p., 1988. Web.
Carlson, D E, Arya, R R, Bennett, M S, Catalano, A, D'Aiello, R V, Dickson, C R, Fortmann, C M, Goldstein, B, Morris, J, & Newton, J L. Task B: Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules: Semiannual subcontract report, 1 February 1987--31 July 1987. United States.
Carlson, D E, Arya, R R, Bennett, M S, Catalano, A, D'Aiello, R V, Dickson, C R, Fortmann, C M, Goldstein, B, Morris, J, and Newton, J L. 1988. "Task B: Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules: Semiannual subcontract report, 1 February 1987--31 July 1987". United States.
@article{osti_6628879,
title = {Task B: Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules: Semiannual subcontract report, 1 February 1987--31 July 1987},
author = {Carlson, D E and Arya, R R and Bennett, M S and Catalano, A and D'Aiello, R V and Dickson, C R and Fortmann, C M and Goldstein, B and Morris, J and Newton, J L},
abstractNote = {This semiannual report presents results of research on stable, high-efficiency, large-area, amorphous-silicon-based submodules. High conversion efficiencies (up to 11.95%) were obtained in small-area, single-junction, a-Si solar cells by using textured tin oxide, superlattice p-layers, graded carbon concentrations near the p-i interface, and highly relective ITO/silver back contacts. Researchers also fabricated single-junction a-SiC and a-SiGe p-i-n cells with efficiencies of 9%--11%. Stacked-junction cells of a-SiC/a-Si, a-SiC/a-SiGe, and a-SiC/a-Si/a-SiGe were fabricated, and efficiencies of about 10% were achieved in some of them. Boron-doped microcrystalline SiC films were developed that contain up to 6 at.% C with conductivities of 3 /times/ 10/sup /minus/3/ ohm /sup /minus/1/ cm/sup /minus/1/ at room temperature and activation energies of 0.11 eV. Stability studies showed that light-induced degradation is usually enhanced by the presence of C grading near the p-i interface. Light-induced degradation of the fill factor of p-i-n cells strongly correlates with optical absorption at 1.2 eV, as measured by photothermal deflection spectroscopy. 11 refs., 70 figs., 16 tabs.},
doi = {},
url = {https://www.osti.gov/biblio/6628879}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jul 01 00:00:00 EDT 1988},
month = {Fri Jul 01 00:00:00 EDT 1988}
}

Technical Report:
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