Burnout sensitivity of power MOSFETs operating in a switching converter

Conference · Wed Jun 01 00:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6594985

Tastet, P; Garnier, J ^[1]; Constans, H; Tizon, A H ^[2]

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1. Centre National d'Etudes Spatiales, Toulouse (France)
2. EREMS, Flourens (France)

Heavy ion tests of a switching converter using power MOSFETs have allowed the authors to identify the main parameters which affect the burnout sensitivity of these components. The differences between static and dynamic conditions are clarified in this paper.

• OSTI ID: 6594985
• Report Number(s): CONF-930953-; CODEN: IETNAE; TRN: 95-004947
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:3Pt1; Conference: RADECS '93: 2nd European conference on radiations and their effects on components and systems, Saint Malo (France), 13-16 Sep 1993; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MOSFET
PHYSICAL RADIATION EFFECTS
EXPERIMENTAL DATA
FAILURES
HEAVY IONS
SENSITIVITY
SPACE FLIGHT
CHARGED PARTICLES
DATA
FIELD EFFECT TRANSISTORS
INFORMATION
IONS
MOS TRANSISTORS
NUMERICAL DATA
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems