PbSnTe double-heterostructure lasers and PbEuTe double-heterostructure lasers by hot-wall epitaxy

Journal Article · Wed Feb 01 00:00:00 EST 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.342995· OSTI ID:6594607

Nishijima, Y

Pb/sub 1-//sub x/ Sn/sub x/ Te, double-heterostructure (DH) lasers and Pb/sub 1-//sub x/ Eu/sub x/ Te DH lasers produced by hot-wall epitaxy have been studied. The growth temperature for both laser crystals is 300 /sup 0/C. This is lower than the growth temperatures obtainable by molecular-beam epitaxy and liquid phase epitaxy. By investigating the I-V characteristics of Pb/sub 1-//sub x/ Sn/sub x/ Te DH lasers with x values greater than 0.2, it was confirmed that the band structure of the p-n heterojunction is type 1'. A Pb/sub 1-//sub x/ Sn/sub x/ Te/sub 1-//sub y/ Se/sub y/ layer, rather than a PbTe/sub 1-//sub y/ Se/sub y/ layer, should be used for the cladding layer of Pb/sub 1-//sub x/ Sn/sub x/ Te DH lasers with x values greater than 0.2. One of the primary factors preventing an increase in the maximum operating temperature to 200 K is that the carrier density injected into the active layer is not sufficient for laser emissions over 200 K due to the p-n heterojunction of the type 1' band structure. The band structure of the p-n heterojunction of Pb/sub 1-//sub x/ Eu/sub x/ Te DH lasers is type 1. Therefore, the maximum operating temperatures of the Pb/sub 1-//sub x/ Eu/sub x/ Te DH lasers are expected to be greater than those of Pb/sub 1-//sub x/ Sn/sub x/ Te DH lasers. The maximum operating temperature of Pb/sub 1-//sub x/ Eu/sub x/ Te DH lasers exceeded 200 K. The maximum operating temperature of the laser with a PbTe active layer was 170 K under CW operation and 243 K under pulsed operation.

• Research Organization: Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
• OSTI ID: 6594607
• Journal Information: J. Appl. Phys.; (United States), Vol. 65:3
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
LEAD SELENIDES
ELECTRONIC STRUCTURE
HETEROJUNCTIONS
VAPOR PHASE EPITAXY
LEAD TELLURIDES
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
TIN SELENIDES
TIN TELLURIDES
INTERFACES
LOW TEMPERATURE
MEDIUM TEMPERATURE
P-N JUNCTIONS
CHALCOGENIDES
EPITAXY
JUNCTIONS
LASERS
LEAD COMPOUNDS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TELLURIDES
TELLURIUM COMPOUNDS
TIN COMPOUNDS
420300* - Engineering- Lasers- (-1989)