Phase-correct bond lengths in crystalline Ge{sub x}Si{sub 1{minus}x} alloys

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.57.14592· OSTI ID:656279

Woicik, J C ^[1]; Miyano, K E ^[2]; King, C A; Johnson, R W ^[3]; Pellegrino, J G ^[1]; Lee, T ^[4]; Lu, Z H ^[5]

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1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
2. Department of Physics, Brooklyn College, Brooklyn, New York 11210 (United States)
3. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
4. Department of Materials Science, Northwestern University, Evanston, Illinois 60208 (United States)
5. National Research Council of Canada, Ottawa, (Canada) K1A OR6

Extended x-ray absorption fine structure performed at the Ge K edge has found the Ge-Ge and Ge-Si bond lengths in a series of crystalline Ge{sub x}Si{sub 1{minus}x} alloys (x{le}0.5) to be compositionally dependent. This accurate measurement was made possible by utilizing the {ital experimentally} derived Ge-Si atomic phase shift from the isoelectronic compounds AlAs and GaP. Strain and Coulomb contributions to the bond lengths are also considered. {copyright} {ital 1998} {ital The American Physical Society}

• OSTI ID: 656279
• Journal Information: Physical Review, B: Condensed Matter, Vol. 57, Issue 23; Other Information: PBD: Jun 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
GERMANIUM SILICIDES
BOND LENGTHS
STRUCTURAL CHEMICAL ANALYSIS
X-RAY SPECTROSCOPY
FINE STRUCTURE
PHASE SHIFT
STRAINS
ELECTRON-ELECTRON INTERACTIONS
NSLS