Intrinsic and interfacial recombination in OMVPE- and MBE-prepared GaAs/Al[sub x]Ga[sub 1-x]As heterostructures

Conference · Fri Jan 01 00:00:00 EST 1993

OSTI ID:6540108

Gilliland, G D; Wolford, D J; Kuech, T F; Bradley, J A ^[1]; Klem, J; Hjalmarson, H P ^[2]

---

1. International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center
2. Sandia National Labs., Albuquerque, NM (United States)

We have studied intrinsic free-carrier recombination in a variety of GaAs structures, including: OMVPE- and MBE-prepared GaAs/Al[sub x]Ga[sub 1-x]As double heterostructures, Na[sub 2]S passivated GaAs structures and bare GaAs structures. We find OMVPE prepared structures are superior to all of these other structures with 300 K lifetimes of [approximately] 2.5 [mu]s and negligible nonradiative interface and bulkrecombination, and thus are truly surface-free (S < 40 cm/s). Moreover, we observe systematic trends in optical properties versus growth conditions. Lastly, we find that the presence of free-exciton recombination in the low-temperature photoluminescence spectra is a necessary but not sufficient condition for optimal optical properties (i.e. long minority-carrier lifetimes).

• Research Organization: Sandia National Labs., Albuquerque, NM (United States); International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center
• Sponsoring Organization: USDOE; USDOD; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6540108
• Report Number(s): SAND-93-0609C; CONF-930880-1; ON: DE93009844; CNN: N00014-85-C-0868; N00014-90-C-0077; N00014-91-J-1697
• Resource Relation: Conference: International conference on the physics of semiconductors, Beijing (China), 10-14 Aug 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
OPTICAL PROPERTIES
RECOMBINATION
GALLIUM ARSENIDES
CHARGE CARRIERS
EXCITONS
HETEROJUNCTIONS
INTERFACES
LIFETIME
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
GALLIUM COMPOUNDS
JUNCTIONS
LUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR JUNCTIONS
360606* - Other Materials- Physical Properties- (1992-)