Studies of electron-beam penetration and free-carrier generation in diamond films
- Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529-0246 (United States)
- Lawrence Livermore National Laboratory, University of California, Livermore, California 94550 (United States)
Experimental observations of the energy-dependent electron-beam penetration in type II-A natural diamond are reported. The experimental data are compared with results obtained from numerical Monte Carlo simulations, and the results are in very good agreement. The results also reveal that a threshold energy of about 125 keV is necessary for complete penetration for a 35 [mu]m sample. It is found that over the 30--180 keV range, the energy dependence of the penetration depth and total path length exhibits a power-law relation. Monte Carlo simulations have also been performed to investigate the excess carrier-generation profiles within diamond for a set of incident [ital e]-beam energy distributions. The simulation results demonstrate the feasibility of tailoring the internal source function, and hence influencing the diffusion currents, the internal electric fields, and charge injection through the contacts.
- OSTI ID:
- 6459581
- Journal Information:
- Journal of Applied Physics; (United States), Vol. 74:3; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIAMONDS
PHYSICAL RADIATION EFFECTS
ELECTRON BEAMS
PENETRATION DEPTH
CHARGE CARRIERS
COMPUTERIZED SIMULATION
ENERGY DEPENDENCE
KEV RANGE
MONTE CARLO METHOD
THRESHOLD ENERGY
BEAMS
CALCULATION METHODS
CARBON
ELEMENTAL MINERALS
ELEMENTS
ENERGY
ENERGY RANGE
LEPTON BEAMS
MINERALS
NONMETALS
PARTICLE BEAMS
RADIATION EFFECTS
SIMULATION
360606* - Other Materials- Physical Properties- (1992-)
665300 - Interactions Between Beams & Condensed Matter- (1992-)