Dark current induced in large CCD arrays by proton-induced elastic reactions and single to multiple-event spallation reactions

Conference · Thu Dec 01 00:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6450211

Chen, L; McNulty, P J; Larson, S ^[1]; Thompson, D A; Miller, T L; Lee, T ^[2]

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1. Clemson Univ., SC (United States). Dept. of Physics and Astronomy
2. Eastman Kodak Co., Rochester, NY (United States)

Computer simulations of the non-ionizing energy loss deposited in sensitive volumes as a result of proton-induced spallation reactions agree with analytic models for large sensitive volumes exposed to high fluence. They predict unique features for small volumes and low-fluence exposures which are observed in exposures of large arrays of CCD pixels. Calculations of the number of spallation reactions per pixel correlate with the recently reported relative frequency of switching dark-current states.

• OSTI ID: 6450211
• Report Number(s): CONF-940726-; CODEN: IETNAE
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:6Pt1; Conference: 31. annual international nuclear and space radiation effects conference, Tucson, AZ (United States), 18-22 Jul 1994; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE-COUPLED DEVICES
PHYSICAL RADIATION EFFECTS
ELASTIC SCATTERING
ELECTRIC CURRENTS
ENERGY DEPOSITION
MATHEMATICAL MODELS
PROTON REACTIONS
BARYON REACTIONS
CHARGED-PARTICLE REACTIONS
CURRENTS
HADRON REACTIONS
NUCLEAR REACTIONS
NUCLEON REACTIONS
RADIATION EFFECTS
SCATTERING
SEMICONDUCTOR DEVICES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems