Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parameters
Journal Article
·
· IEEE Transactions on Nuclear Science
- Univ. of Bordeaux 1, Talence (France). Lab. IXL
- Vanderbilt Univ., Nashville, TN (United States)
- Aerospatiale, Les Mureaux (France)
- Alcatel Telecom, Toulouse (France)
A method to predict low dose rate degradation of bipolar transistors using high dose-rate, high temperature irradiation is evaluated, based on an analysis of four new rad-parameters that are introduced in the BJT SPICE model. This improved BJT model describes the radiation-induced excess base current with great accuracy. The low-level values of the rad-parameters are good tools for evaluating the proposed high-temperature test method because of their high sensitivity to radiation-induced degradation.
- OSTI ID:
- 644140
- Report Number(s):
- CONF-970934-; ISSN 0018-9499; TRN: 98:008073
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 45, Issue 3Pt3; Conference: RADECS 97: radiations and their effects on devices and systems conference, Cannes (France), 15-19 Sep 1997; Other Information: PBD: Jun 1998
- Country of Publication:
- United States
- Language:
- English
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