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Title: Reactive sputter etching of magnetic materials in an HCl plasma

Abstract

In an rf low-pressure HCl plasma NiZn and MnZn ferrite etch up to five times as fast as in an otherwise comparable Ar sputter etch process. Selectivity towards Al/sub 2/O/sub 3/ as an etch mask is of order 10. No redeposited material and very little trenching are seen. The etched slopes have a steepness up to 70/sup 0/, resulting from redeposition and enhanced etching on the sidewalls. This is shown by experiments and by computer simulations.

Authors:
Publication Date:
Research Org.:
Philips Research Lab., Eindhoven (Netherlands)
OSTI Identifier:
6423479
Resource Type:
Journal Article
Journal Name:
Plasma Chem. Plasma Process.; (United States)
Additional Journal Information:
Journal Volume: 8:4
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; HYDROCHLORIC ACID; HIGH-FREQUENCY DISCHARGES; MAGNETIC MATERIALS; ETCHING; ALUMINIUM OXIDES; ARGON IONS; COMPUTERIZED SIMULATION; FERRITES; ION BEAMS; IONIZATION; MANGANESE COMPOUNDS; MASKING; NICKEL COMPOUNDS; PLASMA; POLYCRYSTALS; SCANNING ELECTRON MICROSCOPY; SPUTTERING; TEMPERATURE DEPENDENCE; ZINC COMPOUNDS; ALUMINIUM COMPOUNDS; BEAMS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTALS; ELECTRIC DISCHARGES; ELECTRON MICROSCOPY; FERRIMAGNETIC MATERIALS; HYDROGEN COMPOUNDS; INORGANIC ACIDS; IONS; IRON COMPOUNDS; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SIMULATION; SURFACE FINISHING; TRANSITION ELEMENT COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies; 400800 - Combustion, Pyrolysis, & High-Temperature Chemistry

Citation Formats

Heijman, M G.J. Reactive sputter etching of magnetic materials in an HCl plasma. United States: N. p., 1988. Web. doi:10.1007/BF01016056.
Heijman, M G.J. Reactive sputter etching of magnetic materials in an HCl plasma. United States. https://doi.org/10.1007/BF01016056
Heijman, M G.J. 1988. "Reactive sputter etching of magnetic materials in an HCl plasma". United States. https://doi.org/10.1007/BF01016056.
@article{osti_6423479,
title = {Reactive sputter etching of magnetic materials in an HCl plasma},
author = {Heijman, M G.J.},
abstractNote = {In an rf low-pressure HCl plasma NiZn and MnZn ferrite etch up to five times as fast as in an otherwise comparable Ar sputter etch process. Selectivity towards Al/sub 2/O/sub 3/ as an etch mask is of order 10. No redeposited material and very little trenching are seen. The etched slopes have a steepness up to 70/sup 0/, resulting from redeposition and enhanced etching on the sidewalls. This is shown by experiments and by computer simulations.},
doi = {10.1007/BF01016056},
url = {https://www.osti.gov/biblio/6423479}, journal = {Plasma Chem. Plasma Process.; (United States)},
number = ,
volume = 8:4,
place = {United States},
year = {Thu Dec 01 00:00:00 EST 1988},
month = {Thu Dec 01 00:00:00 EST 1988}
}