Flicker noise in hot carrier semiconductors

Journal Article · Fri Apr 01 00:00:00 EST 1988 · Radiophys. Quantum Electron. (Engl. Transl.); (United States)

OSTI ID:6406360

Orlov, V B; Yakimov, A V

Change in electrical flicker noise power in hot carrier semiconductors can be explained by fluctuations in the intensity of impurity scattering, which contradicts the Hooge-Kleinpenning-Vandamme hypothesis, which relates flicker conduction noise to lattice scattering. It has been shown that such noise can be caused by fluctuations in the effective number of neutral scattering centers within the semiconductor volume. This source modulates carrier mobility, i.e., mobility fluctuations are a secondary effect. We offer herein an explanation of known experimental data on 1/f noise in silicon and gallium arsenide.

• Research Organization: Gor'kii State Univ. (USSR)
• OSTI ID: 6406360
• Journal Information: Radiophys. Quantum Electron. (Engl. Transl.); (United States), Vol. 30:10; Other Information: Translated from Izvest. Vyssh. Uchebny. Zavend.; 30: No. 10, 1255-1260(Oct 1987)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
SCATTERING
GALLIUM ARSENIDES
CARRIER MOBILITY
SEMICONDUCTOR MATERIALS
NOISE
SILICON
CARRIER DENSITY
CRYSTAL LATTICES
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
FLUCTUATIONS
IMPURITIES
IONIZATION
MATHEMATICAL MODELS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
GALLIUM COMPOUNDS
MATERIALS
MOBILITY
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
VARIATIONS
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies