Oxygen and hydrogen effects on the chemical vapor deposition of aluminum nitride films

Journal Article · Tue Jun 01 00:00:00 EDT 1993 · Materials Research Bulletin; (United States)

DOI:https://doi.org/10.1016/0025-5408(93)90049-J· OSTI ID:6400002

Aspar, B; Armas, B; Combescure, C ^[1]; Figueras, A; Rodriguez-Clemente, R ^[2]; Mazel, A; Kihn, Y; Sevely, J ^[3]

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1. IMP/CNRS, Odeillo, Font-Romeu (France)
2. ICMAB/CSIC Campus UAB, Barcelone (Spain)
3. CEMES-LOE/CNRS, Toulouse (France)

Aluminum nitride has been obtained by chemical vapor deposition using AlCl[sub 3] and NH[sub 3] as precursors. Progressive introduction of N[sub 2]0 in the gas mixture has shown the possibility of inserting oxygen in the AlN lattice. This involves strong changes of surface morphology of the deposit and the formation of less-crystallized materials. When hydrogen is added to the gas mixture, these effects are reduced, Electron energy loss spectroscopy has shown that, in this case, oxygen is mainly concentrated on the external parts of AlN crystals, the structure of which has been found consistent with the wurtzite structure.

• OSTI ID: 6400002
• Journal Information: Materials Research Bulletin; (United States), Vol. 28:6; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
ALUMINIUM CHLORIDES
AMMONIA
CRYSTALLIZATION
ENERGY-LOSS SPECTROSCOPY
HYDROGEN
MORPHOLOGY
OXYGEN
PRECURSOR
ALUMINIUM COMPOUNDS
CHEMICAL COATING
CHLORIDES
CHLORINE COMPOUNDS
DEPOSITION
ELECTRON SPECTROSCOPY
ELEMENTS
HALIDES
HALOGEN COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
NITRIDES
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
NONMETALS
PHASE TRANSFORMATIONS
PNICTIDES
SPECTROSCOPY
SURFACE COATING
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication
360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies