Chemical downstream etching of tungsten

Blain, M G; Jarecki, R L; Simonson, R J

doi:10.1116/1.581511

Title: Chemical downstream etching of tungsten

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Abstract

The downstream etching of tungsten and tungsten oxide has been investigated. Etching of chemical vapor deposited tungsten and e-beam deposited tungsten oxide samples was performed using atomic fluorine generated by a microwave discharge of argon and NF{sub 3}. Etching was found to be highly activated with activation energies approximated to be 6.0{plus_minus}0.5thinspkcal/mol and 5.4{plus_minus}0.4thinspkcal/mol for W and WO{sub 3}, respectively. In the case of F etching of tungsten, the addition of undischarged nitric oxide (NO) directly into the reaction chamber results in the competing effects of catalytic etch rate enhancement and the formation of a nearly stoichiometric WO{sub 3} passivating tungsten oxide film, which ultimately stops the etching process. For F etching of tungsten oxide, the introduction of downstream NO reduces the etch rate. {copyright} {ital 1998 American Vacuum Society.}

Authors:

Blain, M G; Jarecki, R L ^[1]; Simonson, R J ^[2]

Microelectronics Development Laboratory, Sandia National Laboratories, Albuquerque, New Mexico 87185-1077 (United States)
Sandia National Laboratories, Albuquerque, New Mexico 87185-1077 (United States)

Publication Date:: Wed Jul 01 00:00:00 EDT 1998

OSTI Identifier:: 638757

Resource Type:: Journal Article

Journal Name:: Journal of Vacuum Science and Technology, A

Additional Journal Information:: Journal Volume: 16; Journal Issue: 4; Other Information: PBD: Jul 1998

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 70 PLASMA PHYSICS AND FUSION; TUNGSTEN; ETCHING; PLASMA; HIGH-FREQUENCY DISCHARGES; THIN FILMS; FLUORINE; CHEMICAL REACTIONS; PHOTOELECTRON SPECTROSCOPY

Citation Formats


                    Blain, M G, Jarecki, R L, and Simonson, R J. Chemical downstream etching of tungsten.  United States: N. p., 1998. 
        Web.  doi:10.1116/1.581511.

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                    Blain, M G, Jarecki, R L, & Simonson, R J. Chemical downstream etching of tungsten.  United States.  https://doi.org/10.1116/1.581511

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                    Blain, M G, Jarecki, R L, and Simonson, R J. 1998.  
        "Chemical downstream etching of tungsten".  United States.  https://doi.org/10.1116/1.581511.

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@article{osti_638757,

  title        = {Chemical downstream etching of tungsten},

  author       = {Blain, M G and Jarecki, R L and Simonson, R J},

  abstractNote = {The downstream etching of tungsten and tungsten oxide has been investigated. Etching of chemical vapor deposited tungsten and e-beam deposited tungsten oxide samples was performed using atomic fluorine generated by a microwave discharge of argon and NF{sub 3}. Etching was found to be highly activated with activation energies approximated to be 6.0{plus_minus}0.5thinspkcal/mol and 5.4{plus_minus}0.4thinspkcal/mol for W and WO{sub 3}, respectively. In the case of F etching of tungsten, the addition of undischarged nitric oxide (NO) directly into the reaction chamber results in the competing effects of catalytic etch rate enhancement and the formation of a nearly stoichiometric WO{sub 3} passivating tungsten oxide film, which ultimately stops the etching process. For F etching of tungsten oxide, the introduction of downstream NO reduces the etch rate. {copyright} {ital 1998 American Vacuum Society.}},

  doi          = {10.1116/1.581511},

  url          = {https://www.osti.gov/biblio/638757},
  journal      = {Journal of Vacuum Science and Technology, A},
number       = 4,

  volume       = 16,

  place        = {United States},

  year         = {Wed Jul 01 00:00:00 EDT 1998},

  month        = {Wed Jul 01 00:00:00 EDT 1998}

}

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