Wide band-gap, fairly conductive p-type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application

Journal Article · Fri Feb 01 00:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95655· OSTI ID:6382679

Yamada, A; Kenne, J; Konagai, M; Takahashi, K

Wide optical band-gap (2.0--2.3 eV) undoped and boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) films have been prepared by both direct photo and rf glow discharge (GD plasma) decomposition of pure methylsilanes or acetylene and disilane gas mixtures. The photochemically prepared p-type films showed higher dark conductivities and lower activation energies. For an optical band gap of 2.0 eV a high conductivity of 7.0 x 10/sup -5/ (S cm/sup -1/) and a low activation energy of 0.33 eV have been measured. The first trial of these wide band-gap, fairly conductive films as a window layer in a p-i-n solar cell showed the high conversion efficiency of 9.46% under AM1 insolation.

• Research Organization: Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152, Japan
• OSTI ID: 6382679
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 46:3
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ACETYLENE
ACTIVATION ENERGY
AMORPHOUS STATE
CRYSTAL DOPING
DEPOSITION
EXPERIMENTAL DATA
ALKYL RADICALS
ALKYNES
CARBIDES
CARBON COMPOUNDS
CHEMICAL REACTIONS
CHEMISTRY
DATA
DECOMPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC DISCHARGES
ELECTRICAL PROPERTIES
ENERGY
EQUIPMENT
HYDRIDES
HYDROCARBONS
HYDROGEN COMPOUNDS
INFORMATION
JUNCTIONS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCHEMICAL REACTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RADICALS
SEMICONDUCTOR JUNCTIONS
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion