Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

Patent · Tue Jun 01 00:00:00 EDT 1999

OSTI ID:6373004

Gessert, T A

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC36-83CH10093
• Assignee: Midwest Research Inst., Kansas City, MO (United States)
• Patent Number(s): US 5909632; A
• Application Number: PPN: US 8-937720
• OSTI ID: 6373004
• Resource Relation: Patent File Date: 25 Sep 1997
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CADMIUM TELLURIDES
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
P-TYPE CONDUCTORS
THIN FILMS
ZINC TELLURIDES
CADMIUM COMPOUNDS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
FILMS
MATERIALS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)