Quantum-Size Effects on the Pressure-Induced Direct-to-Indirect Band-Gap Transition in InP Quantum Dots

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.80.5397· OSTI ID:636192

Fu, H; Zunger, A ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We predict that the difference in quantum confinement energies of {Gamma} -like and X -like conduction states in a covalent quantum dot will cause the direct-to-indirect transition to occur at substantially lower pressure than in the bulk material. Furthermore, the first-order transition in the bulk is predicted to become, for certain dot sizes, a second-order transition. Measurements of the {open_quotes}anticrossing gap{close_quotes} could thus be used to obtain unique information on the {Gamma}-X- L intervalley coupling, predicted here to be surprisingly large (50{endash}100thinspthinspmeV). {copyright} {ital 1998} {ital The American Physical Society}

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 636192
• Journal Information: Physical Review Letters, Vol. 80, Issue 24; Other Information: PBD: Jun 1998
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
ELECTRONIC STRUCTURE
ENERGY GAP
PRESSURE DEPENDENCE
THIN FILMS
LATTICE PARAMETERS
DEFORMATION
PHASE TRANSFORMATIONS