SciTech Connect

Title: Dielectrics for GaN based MIS-diodes

Dielectrics for GaN based MIS-diodes GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.
Authors: ; ;
Publication Date:
OSTI Identifier:OSTI ID: 634115
Report Number(s):SAND--98-0524C; CONF-971201--
ON: DE98004137; BR: YN0100000; CNN: Grant ECS-9522887; TRN: AHC2DT01%%126
DOE Contract Number:AC04-94AL85000
Resource Type:Technical Report
Resource Relation:Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: Feb 1998
Research Org:Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org:USDOE Office of Financial Management and Controller, Washington, DC (United States);National Science Foundation, Washington, DC (United States);Office of Naval Research, Washington, DC (United States);Defense Advanced Research Projects Agency, Arlington, VA (United States);Electric Power Research Inst., Palo Alto, CA (United States)
Country of Publication:United States
Language:English
Subject: 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DIODES; GALLIUM NITRIDES; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; ELECTRICAL PROPERTIES; GALLIUM OXIDES; GADOLINIUM OXIDES; EXPERIMENTAL DATA