AlGaAs growth by OMCVD using an excimer laser
AlGaAs has been grown on GaAs by laser assisted OMCVD using an excimer laser, wavelength 193 nm, and a Cambridge OMCVD reactor. Films were grown at temperatures of 450 and 500 C with the laser beam parallel to the surface and impinging onto the surface at 15 deg from parallel. The samples were heated by RF coils while the laser beam was perpendicular to the gas flow. Typical gas flow parameters are 12 slm of H/sub 2/, 15 sccm of Ga(CH3)3, 13 sccm of Al(CH3)3, and a pressure of 250 mbar. The initial energy density of the beam at the surface was 40 mJ/sq cm, the pulse rate was 20 pps, and the growth time was 7 min. The films were analyzed by Auger electron spectroscopy for the aluminum concentration and by TEM for the surface morphology.
- Research Organization:
- National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center
- OSTI ID:
- 6337814
- Report Number(s):
- N-87-23304; CONF-861207-113; NASA-TM-88937; E-3379; NAS-1.15:88937
- Resource Relation:
- Conference: Materials Research Society fall meeting, Boston, MA, USA, 1 Dec 1986
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
GALLIUM ARSENIDES
EPITAXY
EXCIMER LASERS
GAS FLOW
PHOTOLYSIS
THIN FILMS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
DECOMPOSITION
FILMS
FLUID FLOW
GALLIUM COMPOUNDS
GAS LASERS
LASERS
PHOTOCHEMICAL REACTIONS
PNICTIDES
360601* - Other Materials- Preparation & Manufacture