Deposition of dopant impurities and pulsed energy drive-in

Patent · Tue Jun 29 00:00:00 EDT 1999

OSTI ID:6332900

Wickboldt, P; Carey, P G; Smith, P M; Ellingboe, A R

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.

• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Univ. of California, Oakland, CA (United States)
• Patent Number(s): US 5918140; A
• Application Number: PPN: US 8-876414
• OSTI ID: 6332900
• Resource Relation: Patent File Date: 16 Jun 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL DOPING
ION BEAMS
LASER RADIATION
MELTING
SEMICONDUCTOR MATERIALS
BEAMS
CHEMICAL COATING
DEPOSITION
ELECTROMAGNETIC RADIATION
MATERIALS
PHASE TRANSFORMATIONS
RADIATIONS
SURFACE COATING
360601* - Other Materials- Preparation & Manufacture